Surface engineering to achieve organic ternary memory with a high device yield and improved performance.
نویسندگان
چکیده
Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.
منابع مشابه
Surface engineering to achieve organic ternary memory with a high device yield and improved performance† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6sc03986c Click here for additional data file.
Xiang Hou, Xin Xiao, Qian-Hao Zhou, Xue-Feng Cheng, Prof. Jing-Hui He, Prof. Qing-Feng Xu, Prof. Hua Li, Prof. Na-Jun Li, Prof. Dong-Yun Chen and Prof. Jian-Mei Lu College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, PR China; National United Engineering Laboratory of Functiona...
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ورودعنوان ژورنال:
- Chemical science
دوره 8 3 شماره
صفحات -
تاریخ انتشار 2017